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A new way to generate light using pre-existing defects in semiconductors | MIT News | Massachusetts Institute of Technology
Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence - Nanoscale (RSC Publishing)
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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells: Applied Physics Letters: Vol 113, No 11
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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | SpringerLink
Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics | Nano Letters
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