Uncovering the Structural Evolution of Arsenene on SiC Substrate | The Journal of Physical Chemistry C
Simulation and experimental studies of the dissolution corrosion of 4H-SiC in liquid Pb/Bi - ScienceDirect
Nanomaterials | Free Full-Text | Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers
Surface Properties of Nanocrystalline PbS Films Deposited at the Water–Oil Interface: A Study of Atmospheric Aging | Langmuir
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PDF] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface | Semantic Scholar
![PDF] Native point defects and carbon clusters in 4H-SiC: A hybrid functional study | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/cba6ee147fb1c46140809103355245fe425cd523/5-Figure1-1.png "PDF] Native point defects and carbon clusters in 4H-SiC: A hybrid functional study | Semantic Scholar")
PDF] Native point defects and carbon clusters in 4H-SiC: A hybrid functional study | Semantic Scholar
Coatings | Free Full-Text | Radiation Effect in Ti-Cr Multilayer-Coated Silicon Carbide under Silicon Ion Irradiation up to 3 dpa
Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory | ACS Applied Materials & Interfaces
Rapid Preparation and Electrochemical Energy Storage Applications of Silicon Carbide and Silicon Oxycarbide Ceramic/Carbon Nanocomposites Derived Via Flash Photothermal Pyrolysis of Organosilicon Preceramic Polymers | Chemistry of Materials
The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface - ScienceDirect
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PDF] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface | Semantic Scholar
Dipole Formation and Electrical Properties According to SiO2 Layer Thickness at an Al2O3/SiO2 Interface | The Journal of Physical Chemistry C
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PDF] Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface | Semantic Scholar
Synthesis of Silicon Carbide-Derived Carbon as an Electrode of a Microbial Fuel Cell and an Adsorbent of Aqueous Cr(VI) | Industrial & Engineering Chemistry Research
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PDF] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface | Semantic Scholar
Figure 2 from Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface | Semantic Scholar
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors | SpringerLink
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PDF] Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface | Semantic Scholar
Size and Surface Chemistry Tuning of Silicon Carbide Nanoparticles | Langmuir
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PDF] Native point defects and carbon clusters in 4H-SiC: A hybrid functional study | Semantic Scholar
Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties | Scientific Reports
Covalent Surface Modification of Oxide Surfaces - Pujari - 2014 - Angewandte Chemie International Edition - Wiley Online Library
Thermal Oxidation Mechanism of Silicon Carbide | IntechOpen
Room-temperature single-photon emitters in silicon nitride | Science Advances
Fundamental Aspects of Silicon Carbide Oxidation | IntechOpen
Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs: Applied Physics Letters: Vol 118, No 3
